For Immediate Release

CONTACT:          Tom Coughlin                                                     

Coughlin Associates                                                           

(408) 202-5098                                                                                     




Emerging Memories Poised to Explode



San Jose, CA, July 25, 2018ŃCoughlin Associates and Objective Analysis release their Emerging Memories Poised to Explode:  An Emerging Memory Report. (you can find additional information and order the report at:


The memories addressed in this 161-page report, containing 31 tables and 111 figures, include PCM, ReRAM, FeRAM and MRAM Technology as well as a variety of less mainstream technologies.   Flash memory will remain a dominant solid-state memory for several generations with all manufacturers having moved to 3D flash.  The 3D X-Point technology is poised to impact DRAM production while STT MRAM will impact SRAM, NOR and some DRAM. Resistive RAM (ReRAM) appears to be a potential replacement for flash memory sometime in the next decade.  


The rate of development and projected manufacturing ramp for emerging memory will result in lower prices, and the attractiveness of replacing volatile memory with non-volatile memory make these technologies very competitive. 


Moving to a non-volatile main memory and cache memory will reduce power usage directly as well as enable new power saving modes, provide faster recovery from power off and enable stable computer architectures that retain their state even when power is turned off. 


We project that 3D XPoint Memory, with significant gigabyte shipments in 2020-2021, and with an assumed significant price advantage versus DRAM will reach $3.0 B in revenues by 2028. 


MRAM and STT-RAM baseline revenues are expected to increase from about $36M in 2017 to $3.3B by 2028.  Much of this revenue gain will be at the expense of SRAM, NOR flash and some DRAM, although STT-RAM is developing its own special place in the pantheon of shipping memory technologies.


The demand for MRAM and STT-MRAM will drive demand for capital equipment to manufacture these devices.  While MRAM and STT-MRAM can be built on standard CMOS circuits supplied by large semiconductor fabricators, MRAM and STT MRAM do require specialized fabrication equipment for the MRAM layers that is similar to or the same as that used in manufacturing the magnetic read sensors in hard disk drives.


The increasing demand for nonvolatile memory based upon MRAM and STT MRAM will cause total manufacturing equipment revenue used for making the MRAM devices to rise from an estimated $29M in 2017 to between $517M to $792M by 2028 with a baseline projected spending of $641M.